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| HFT150-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HFT150-28 is Designed for .112x45 A L PACKAGE STYLE .500 4L FLG FEATURES: * PG = 16 dB min. at 150 W/30 MHz * IMD3 = -28 dBc max. at 150 W(PEP) * OmnigoldTM Metalization System FULL R O.125 NOM. C B E H D G F K IJ MAXIMUM RATINGS ID V(BR)DSS VGS PDISS TJ T STG JC O O DIM A B C D E F MINIMUM inches / mm MAXIMUM inches / mm 16 A 65 V 40 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.60 OC/W O O O .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 G H I J K L ORDER CODE: ASI10616 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS VDS GFS CISS COSS CRSS PIN GPS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V TC = 25 OC NONETEST CONDITIONS IDS = 100 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 10 A ID = 5 A MINIMUM TYPICAL MAXIMUM 65 ----1.0 --3.5 ------------375 188 26 --0.5 1.0 5.0 1.5 ----- UNITS V mA A V V mho pF VGS = 28 V VDS = 0 V F = 1.0 MHz --- VDD = 28 V f = 175 MHz IDQ = 250 mA POUT = 150 W (PEP) 50 15 10 W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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